Semiconductor device and power conversion device using the same

Details Semiconductor device and power conversion device using the same Semiconductor device and power conversion device using the same

2008-06-19

2010-11-23

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S194000, C257S284000, C257S302000, C257S476000, C257S477000, C257SE27016, C257SE27022, C438S172000

Reexamination Certificate

active

07838907

ABSTRACT:
In a semiconductor device in which a diode and a high electron mobility transistor are incorporated in the same semiconductor chip, a compound semiconductor layer of the high electron mobility transistor is formed on a main surface (first main surface) of a semiconductor substrate of the diode, and an anode electrode of the diode is electrically connected to an anode region via a conductive material embedded in a via hole (hole) reaching a p+region which is the anode region of the main surface of the semiconductor substrate from a main surface of the compound semiconductor layer.

REFERENCES:
patent: 6495888 (2002-12-01), Yamato
patent: 6936877 (2005-08-01), Klee et al.
patent: 6953981 (2005-10-01), Johansson et al.
patent: 7291872 (2007-11-01), Hikita et al.
patent: 2002/0177326 (2002-11-01), Klee et al.
patent: 2006/0060895 (2006-03-01), Hikita et al.
patent: 2007/0045765 (2007-03-01), Brar et al.
patent: 2007/0228401 (2007-10-01), Machida et al.
patent: 2008/0124889 (2008-05-01), Roggenbauer et al.
patent: 2006-086398 (2006-03-01), None
patent: 2006086398 (2006-03-01), None

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