Method of manufacturing a magnetoresistive element

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C029S603070, C029S603130, C029S603150, C029S603180, C216S022000, C216S048000, C360S324100, C360S324110, C360S324120, C427S127000, C427S128000, C427S131000

Reexamination Certificate

active

07739787

ABSTRACT:
In an MR element, each of a pinned layer and a free layer includes a Heusler alloy layer. The Heusler alloy layer has two surfaces that are quadrilateral in shape and face toward opposite directions. The Heusler alloy layer includes one crystal grain that touches four sides of one of the two surfaces. In a method of manufacturing the MR element, a layered film to be the MR element is formed and patterned, and then heat treatment is performed on the layered film patterned, so that crystal grains included in a film to be the Heusler alloy layer in the layered film grow and one crystal grain that touches four sides of one of the surfaces of the film to be the Heusler alloy layer is thereby formed.

REFERENCES:
patent: 5528440 (1996-06-01), Fontana et al.
patent: 7310207 (2007-12-01), Hasegawa et al.
patent: 7336453 (2008-02-01), Hasegawa et al.
patent: 7535682 (2009-05-01), Shimazawa et al.
patent: 2003/0073778 (2003-04-01), Zhang et al.
patent: 2003/0137785 (2003-07-01), Saito
patent: 2005/0073778 (2005-04-01), Hasegawa et al.
patent: A-08-45032 (1996-02-01), None
patent: A-09-288807 (1997-11-01), None
patent: A-2003-218428 (2003-07-01), None
patent: A-2005-116703 (2005-04-01), None
K. Nagasaka et al., “Giant Magnetoresistance Properties of Spin Valve Films in Current-Perpendicular-To-Plane Geometry”, Journal of the Magnetic Society of Japan, vol. 25, No. 4-2, (2001) pp. 807-810.
J. A. Caballero et al., “Effect of Deposition Parameters on the CPP-GMR of NiMnSb-Based Spin-Valve Structures”, Journal of Magnetism and Magnetic Materials, vols. 198-199, (1999) pp. 55-57.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing a magnetoresistive element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a magnetoresistive element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a magnetoresistive element will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4239228

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.