Cross-fed FET power-chip

Details Cross-fed FET power-chip Cross-fed FET power-chip

1990-03-29

1991-04-16

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330 53, 330286, 330295, 333109, H03F 3193, H03F 368

Patent

active

050086332

ABSTRACT:
A cross-fed FET power-chip amplifier employing a plurality of stages each having two FET devices. Wide band four port directional couplers couple the stages, each having an input, and output and two driver input terminals. An input signal is connected to the input terminal and the coupler is designed to produce a majority of the output at the output terminal and a lesser output at each of the driver input which have a 90.degree. phase relationship. Each driver input is connected to one gate of the two FET device, the sources of which are connected to common and the drains of which are connected together by a broadband 90.degree. coupler to accommodate the 90.degree. offset at the gates. The output of the broadband coupler is connected to the input terminal of the directional coupler of each subsequent stage and one or more combiners are coupled to the output terminals of the directional coupler of each stage and the broadband coupler of the final stage to drive an output signal. In a preferred embodiment, two preamplification stages are employed and ten subsequent stages of gallium arsenide FETs. Two five way combiners combine the outputs, one combining the outputs of the odd numbered directional couplers and the other the outputs of the even numbered directional couplers and the final stage broadband coupler. A two way combiner then combines the outputs of the five way combiners, the output of the two way combiner going to a isolator to provide stability for the amplifier under open load condition.

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