Magnetic transistor structure

Details Magnetic transistor structure Magnetic transistor structure

2006-10-06

2010-06-29

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S422000, C257S423000, C257S424000, C257S425000, C257S426000, C257S427000, C257SE29323, C257SE29167, C257SE43004, C257SE27006

Reexamination Certificate

active

07745893

ABSTRACT:
A magnetic transistor includes a first magnetic section, a second magnetic section, a conductive section, a first metal terminal, and a second metal terminal. The conductive section is disposed between and is in direct contact with both the first and second magnetic section. The first metal terminal is disposed on one end of an opposite surface to the conductive section of the first magnetic section. The second metal terminal is disposed on one end approximately diagonal to the first metal terminal on an opposite surface to the conductive section of the second magnetic section. While the magnetic transistor structure is turned on, a current flows through the first magnetic section and the second magnetic section via the conductive section.

REFERENCES:
patent: 5432373 (1995-07-01), Johnson
patent: 5783460 (1998-07-01), Han et al.
patent: 6104275 (2000-08-01), Maeda
patent: 6278593 (2001-08-01), Nakatani et al.
patent: 2006/0139817 (2006-06-01), Inomata et al.
patent: 2007/0086233 (2007-04-01), Lai et al.
patent: 2007/0152254 (2007-07-01), Lai et al.
patent: 2007/0164382 (2007-07-01), Lai et al.
patent: 696 09 165 (2001-03-01), None
patent: 101 44 385 (2003-03-01), None
patent: 102 20 911 (2003-12-01), None
patent: 0 959 475 (1999-11-01), None
patent: 1 349 184 (2003-10-01), None
patent: 8-329426 (1996-12-01), None
Machine translation of JP08-329426, foreign document cited previously by applicant.
English language translation of abstract of JP 8-329426.
English language translation of abstract of DE 101 44 385.
English language translation of abstract of DE 696 09 165.
English language translation of abstract of DE 102 20 911.

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