Solid phase epitaxial growth

Metal treatment – Compositions – Heat treating

Patent

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Details

148171, 148180, 148181, 148185, 148186, 148188, 427 86, H01L 2120

Patent

active

040122352

ABSTRACT:
A solid phase epitaxially grown semi-conductor is described wherein a thin film of a semi-conductor material together with a thin film dopant are transported through a metal film onto a substrate, using a temperature below the eutectic temperature for the material.

REFERENCES:
patent: 3886002 (1975-05-01), Akimov et al.

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