Semiconductor device and method for producing the same

Details Semiconductor device and method for producing the same Semiconductor device and method for producing the same

2008-04-11

2010-12-28

Wilson, Allan R (Department: 2815)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S392000, C257SE21004

Reexamination Certificate

active

07858484

ABSTRACT:
A semiconductor device includes a substrate, an insulating film disposed on the substrate, a resistor groove disposed in the insulating film, and a resistor disposed in the resistor groove. The resistor is separated from all side surfaces of the resistor groove by a predetermined distance.

REFERENCES:
patent: 4897360 (1990-01-01), Guckel et al.
patent: 6362066 (2002-03-01), Ryum et al.
patent: 6806136 (2004-10-01), Hsu
patent: 7365397 (2008-04-01), Nomura
patent: 7485540 (2009-02-01), Chinthakindi et al.
patent: 7538397 (2009-05-01), Kotani
patent: 7622345 (2009-11-01), Ting et al.
patent: 2003/0181049 (2003-09-01), Huang et al.
patent: 2005/0088491 (2005-04-01), Truninger et al.
patent: 2005/0181556 (2005-08-01), Hsu
patent: 2005/0248397 (2005-11-01), Aota
patent: 2007/0096183 (2007-05-01), Ogawa et al.
patent: 2008/0188053 (2008-08-01), Ting et al.
patent: 57-211253 (1982-12-01), None
patent: 63-087762 (1988-04-01), None
patent: 06-005786 (1994-01-01), None
patent: 08-335701 (1996-12-01), None
patent: 2000-156420 (2000-06-01), None
patent: 2000-195966 (2000-07-01), None
patent: 2001-257272 (2001-09-01), None
patent: 2004-134802 (2004-04-01), None
patent: 2005-175262 (2005-06-01), None
patent: 2008-103501 (2008-05-01), None
patent: 2008-235798 (2008-10-01), None
S. Yamaguchi et al.; High Performance Dual Metal Gate CMOS with High Mobility and Low Threshold Voltage Applicable to Bulk CMOS Technology; 2006 Symposium on VLSI Technology Digest of Technical Papers.
Office Action issued on Mar. 17, 2009, in the related Japanese application JP 2007-107973.

Affiliated with

Also associated with

Rating

Semiconductor device and method for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4235102