Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2007-06-15

2010-02-16

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S050100, C372S029013, C372S038050

Reexamination Certificate

active

07664152

ABSTRACT:
A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film on the front surface electrode or the rear surface electrode and made of a material that does not react with Au, and a coating film that covers an end face on a light emitting side and an end face opposite the light emitting side. The anti-adhesive films may be located at least at the four corners of the front or rear surface electrode.

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