Semiconductor heterojunction structure

Details Semiconductor heterojunction structure Semiconductor heterojunction structure

1990-09-27

1992-05-26

Prenty, Mark

357 17, 357 4, 357 61, H01L 29161, H01L 3300, H01L 2712, H01L 2920

Patent

active

051172674

ABSTRACT:
A semiconductor heterojunction structure comprising a p-type diamond layer and an n-type cubic boron nitride layer on a surface of said p-type diamond layer. Such heterojunction structure is useful for a semiconductor device such as a diode, a transistor, a laser and a rectifier, particularly an element which emits light from blue light to ultraviolet light.

REFERENCES:
patent: 3142595 (1964-07-01), Wentorf, Jr.
patent: 4875967 (1989-10-01), Mishima et al.
patent: 4929986 (1990-05-01), Yoder
Warren E. Pickett, "Thin Superlattices and Band-Gap Discontinuities: The (110) Diamond-Boron Nitride Interface", Physical Review B, vol. 38, No. 2, Jul. 15, 1988, pp. 1316-1322.

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