Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-02-05
2010-12-21
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S762000, C257S763000, C257S764000, C257S765000, C257S766000, C257SE23161, C257SE23158, C438S648000, C438S656000, C438S685000, C438S686000, C438S687000
Reexamination Certificate
active
07855454
ABSTRACT:
A method of activating a metal structure on an intermediate semiconductor device structure toward metal plating. The method comprises providing an intermediate semiconductor device structure comprising at least one first metal structure and at least one second metal structure on a semiconductor substrate. The at least one first metal structure comprises at least one aluminum structure, at least one copper structure, or at least one structure comprising a mixture of aluminum and copper and the at least one second metal structure comprises at least one tungsten structure. One of the at least one first metal structure and the at least one second metal structure is activated toward metal plating without activating the other of the at least one first metal structure and the at least one second metal structure. An intermediate semiconductor device structure is also disclosed.
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Law et al., “The Effect of Passivation Defect on Electroless Nickel Under Bump Metallization Plating Process,” www.ee.vst.hk/ —flipchip/ctu—simon.doc.
Akram Salman
Hiatt William M.
Wark James M.
Gurley Lynne A
Li Meiya
Micro)n Technology, Inc.
TraskBritt
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