High-impedance FET circuit

Details High-impedance FET circuit High-impedance FET circuit

1990-01-23

1991-04-16

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307304, 307491, H03K 301, H03K 3353, G06G 710

Patent

active

050085654

ABSTRACT:
A high-impedance FET circuit in which the anode of a diode is electrically connected to the first side of the FET and the diode's cathode is connected to the FET gate. The diode biases the FET to reduce second side current when the second side is at a positive potential relative to the diode cathode. Such circuits placed back-to-back accommodate signals of both polarities and are used as a high impedance element in a low-pass filter implemented in an integrated circuit. An equivalent symmetrical circuit implemented with two enhancement FETs is also disclosed.

REFERENCES:
patent: 4256978 (1981-03-01), Pinckaers
patent: 4443719 (1984-04-01), Planer et al.
patent: 4558235 (1985-12-01), White et al.
patent: 4686451 (1987-08-01), Li et al.
patent: 4707625 (1987-11-01), Yanagisawa
patent: 4712023 (1987-12-01), Otsuki et al.
patent: 4752701 (1988-06-01), Gonoi
patent: 4804866 (1989-02-01), Akiyama
patent: 4833342 (1989-05-01), Kiryu et al.

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