Method of switching and switching device for solid state...

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Current driver

Reexamination Certificate

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C327S432000, C327S433000

Reexamination Certificate

active

07741883

ABSTRACT:
A solid state switching device (SSSD) for AC and DC high power solid state power controller includes, for DC applications, a MOSFET and an IGBT connected in parallel and an optional zener diode connecting a collector and a gate of the IGBT. For AC applications, the SSSD includes a “back to back” pair of MOSFETs connected in parallel with a pair of counter-parallel IGBTs, each in series with a diode, and, optionally, zener diodes “back to back” with conventional diodes connecting a collector and a gate of each of the IGBT. A method of switching establishes a sequence of turning on/off the MOSFET(s) and the IGBT(s) wherein the IGBT(s) turn on before and turn off after the MOSFET(s). A negative feedback prevents a voltage of SSSD rising above predetermined level.

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patent: 7230587 (2007-06-01), Onozawa et al.
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patent: 7417409 (2008-08-01), Partridge
High frequency power switch—Improved performance by MOSFETs and IGBTs connected in parallel Hoffmann, Klaus F.; Karst, Jens Peter Source: 2005 European Conference on Power Electronics and Applications, v 2005, 2005 European Conference on Power Electronics and Applications, 2005, p 1665784 Conference: 2005 European Conference on Power Electronics and Applications, Sep. 11-14, 2005, Dresden, Germany Publisher: Institute of Electrical and Electronics Engineers Computer Society.
Evaluating conduction loss of a parallel IGBT-MOSFET combination Kimball, Jonathan W; Chapman, Patrick L. Source: Conference Record—IAS Annual Meeting (IEEE Industry Applications Society), v 2, Conference Record of the 2004 IEEE Industry Applications Conference; 39th IAS Annual Meeting, 2004, p. 1233-1237 ISSN:0197-2618 CODEN: CIASDZ.

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