Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2008-04-07
2010-12-14
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S199000, C257S438000, C257S481000, C257S603000, C257SE31064, C257SE31116, C257SE29335, C257SE21357, C438S091000, C438S380000
Reexamination Certificate
active
07851823
ABSTRACT:
A transmitted light absorption/recombination layer, a barrier layer, a wavelength selection/absorption layer, and an InP window layer having a p-type region are supported by an n-type substrate and arranged in that order. Light with a wavelength of 1.3 μm reaches the wavelength selection/absorption layer through the InP window layer. Then, the light is absorbed by the wavelength selection/absorption layer and drawn from the device as an electric current signal. Light with a wavelength of 1.55 μm reaches the transmitted light absorption/recombination layer through the barrier layer. Then, the light is absorbed by the transmitted light absorption/recombination layer, generating electrons and holes. These electrons and holes recombine with each other and, hence, disappear.
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Kazuhito Yasuda et al., “Heterojunction Effect on Spectral and Frequency Responses in InP/InGaAsP/InGaAs APD”,Japanese J. of Applied Physics, vol. 22 (1983) Supplemental 22-1, pp. 291-294.
Ho Hoang-Quan T
Leydig , Voit & Mayer, Ltd.
Loke Steven
Mitsubishi Denki & Kabushiki Kaisha
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