Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2009-07-07
2010-10-26
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S088000, C257SE33064, C257SE33062
Reexamination Certificate
active
07821004
ABSTRACT:
The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode (167) is arranged so as to partially overlap a source wiring (137) for shielding the gap between pixels from light, and a thin film transistor is arranged so as to partially overlap a gate wiring (166) for shielding a channel region of the thin film transistor from light, thereby realizing a high pixel aperture ratio.
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T. Ueda, '94 The Latest LCD Technology, ȁ
Koyama Jun
Yamazaki Shunpei
Fish & Richardson P.C.
Mandala Victor A
Semiconductor Energy Laboratory Co,. Ltd.
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