Method for etching using a multi-layer mask

Details Method for etching using a multi-layer mask Method for etching using a multi-layer mask

2007-05-21

2010-12-28

Rosasco, Stephen (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07858270

ABSTRACT:
A method of dry developing a multi-layer mask on a substrate is described. The method comprises forming the multi-layer mask on the substrate, wherein the multi-layer mask comprises a lithographic layer overlying a second mask layer. A feature pattern is then formed in the lithographic layer using a lithographic process, wherein the feature pattern comprises a first critical dimension (CD). Thereafter, the feature pattern is transferred from the lithographic layer to the second mask layer using a dry plasma etching process, wherein the dry plasma etching process comprises introducing a process gas, forming plasma from the process gas, and exposing the substrate to the plasma. During the pattern transfer, the first CD in the lithographic layer is reduced to a second CD in the silicon-containing layer.

REFERENCES:
patent: 2002/0151179 (2002-10-01), Juengling
patent: 2004/0069745 (2004-04-01), Ho et al.
patent: 2004/0097077 (2004-05-01), Nallan et al.
patent: 2005/0003675 (2005-01-01), Carducci et al.
patent: 2006/0258116 (2006-11-01), Kim et al.
patent: 2007/0010099 (2007-01-01), Du et al.

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