Organic electronic device

Details Organic electronic device Organic electronic device

2008-04-28

2010-10-26

Such, Matthew W (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257SE51006, C257SE51050

Reexamination Certificate

active

07821001

ABSTRACT:
An organic electronic device. The device includes a first electrode to inject or extract hole, the first electrode including a conductive layer and an n-type organic compound layer disposed on the conductive layer, a second electrode to inject or extract electron, a p-type organic compound layer disposed between the n-type organic compound layer and the second electrode. The p-type organic compound layer forms an NP junction between the n-type organic compound layer and the p-type organic compound layer. The energy difference between a lowest unoccupied molecular orbital (LUMO) energy of the n-type organic compound layer and a Fermi energy of the conductive layer is about 2 eV or less, and the energy difference between the LUMO energy of the n-type organic compound layer and a highest unoccupied molecular orbital (HOMO) energy of the p-type organic compound layer is about 1 eV or less.

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