Method for depositing a film using a charged particle beam,...

Details Method for depositing a film using a charged particle beam,... Method for depositing a film using a charged particle beam,...

2008-10-31

2010-02-23

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S309000, C250S492100, C250S492210, C438S795000, C438S798000, C118S7230FI

Reexamination Certificate

active

07667212

ABSTRACT:
Certain film deposition and selective etching technology may involve scanning of a charged particle beam along with a deposition gas and etching gas, respectively. In conventional methods, unfortunately, the deposition rate or the selective ratio is oftentimes decreased depending on optical system setting, scan spacing, dwell time, loop time, substrate, etc. Accordingly, an apparatus is provided for finding an optical system setting, a dwell time, and a scan spacing. These parameters are found to realize the optimal scanning method of the charged particle beam from the loop time dependence of the deposition rate or etching rate. This deposition rate or etching rate are measurements stored in advance for a desired irradiation region where film deposition or selective etching should be performed. The apparatus displays a result of its judgment on a display device.

REFERENCES:
patent: 5357116 (1994-10-01), Talbot et al.
patent: 6268608 (2001-07-01), Chandler
patent: 6641705 (2003-11-01), Phaneuf et al.
patent: 7242013 (2007-07-01), Fukuda et al.
patent: 7453072 (2008-11-01), Fukuda et al.
patent: 3-289133 (1990-04-01), None
patent: 6-97084 (1992-09-01), None
patent: 8-298243 (1995-04-01), None
patent: 9-120153 (1996-09-01), None
patent: 2000-29201 (1998-07-01), None
patent: 2001-7079 (1999-06-01), None
An Office Action dated Jul. 29, 2008 regarding Japanese Patent Application No. 2003-336691, in English.
An Office Action dated Oct. 14, 2008 regarding Japanese Patent Application No. 2003-336691, in English.

Affiliated with

Also associated with

Rating

Method for depositing a film using a charged particle beam,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for depositing a film using a charged particle beam,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for depositing a film using a charged particle beam,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4221012