Semiconductor assembly and method for forming seal ring

Details Semiconductor assembly and method for forming seal ring Semiconductor assembly and method for forming seal ring

2008-10-08

2010-11-02

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Entirely of metal except for feedthrough

C257SE23077

Reexamination Certificate

active

07825507

ABSTRACT:
A method for forming a seal ring is disclosed. First, a substrate including a MEMS region, a logic region and a seal ring region is provided. Second, a trench is formed in the MEMS region and multiple recesses are formed in the seal ring region. An oxide fills the trench and the recesses. Later, a MOS is form in the logic region and a dielectric layer is formed on the substrate. Then, an etching procedure is carried out to partially remove the dielectric layer and simultaneously remove the oxide in the multiple recesses completely to form a seal ring space. Afterwards, a metal fills the seal ring space to from the seal ring.

REFERENCES:
patent: 7354799 (2008-04-01), Kinderknecht et al.
patent: 2007/0035001 (2007-02-01), Kuhmann et al.
patent: 2007/0105370 (2007-05-01), Kinderknecht et al.
patent: 2008/0081404 (2008-04-01), Barna et al.

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