Method of forming a mask pattern

Details Method of forming a mask pattern Method of forming a mask pattern

2007-05-22

2010-02-02

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S725000, C438S737000, C438S740000, C257SE21038

Reexamination Certificate

active

07655573

ABSTRACT:
A method of forming a mask pattern and, more particularly, a method of forming a mask pattern wherein micro patterns having resolutions lower than those of exposure equipment by overcoming the resolutions of the exposure equipment, wherein, a silicon layer is formed over a substrate and is patterned. The patterned silicon layer is oxidized to form the entire surface of the silicon layer to a specific thickness by using an oxide layer. The oxide layer is removed to expose a top surface of the silicon layer. A mask pattern is formed with the remaining oxide layer by removing the silicon layer.

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