Semiconductor integrated circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257SE23144, C257S776000, C257S691000

Reexamination Certificate

active

07659629

ABSTRACT:
A semiconductor integrated circuit having a multilayer wiring structure is provided which includes: a top metal wiring layer (MTOP) including a plurality of top layer power supply wirings and a next-to-top metal wiring layer (MTOP-1) directly below the top metal wiring layer MTOPincluding a plurality of next-to-top layer power supply wirings. Each of the top layer and the next-to-top layer power supply wirings also includes first potential wirings for supplying a first potential to the circuit elements and second potential wirings for supplying a second potential to the circuit elements. The top layer power supply wirings and the next-to-top layer power supply wirings cross each other and have a top layer insulating film disposed between them. First and second contacts are provided in the insulating film for connecting the first potential wirings and second potential wirings in the top and the next-to-top metal wiring layers with each other.

REFERENCES:
patent: 6849920 (2005-02-01), Ozawa
patent: 2002/0149116 (2002-10-01), Kusumoto
patent: 2003/0209727 (2003-11-01), Ohayashi et al.
patent: 2004/0228066 (2004-11-01), Sakurabayashi et al.
patent: 09-064284 (1997-03-01), None
patent: 2001-339169 (2001-12-01), None
patent: 2002-270771 (2002-09-01), None
patent: 2003-124334 (2003-04-01), None
patent: 2003-249559 (2003-09-01), None
patent: 2003-324153 (2003-11-01), None
patent: 2004-104136 (2004-04-01), None
patent: 2004-342924 (2004-12-01), None

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