Magnetoresistive element

Details Magnetoresistive element Magnetoresistive element

2006-09-22

2010-02-16

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S422000, C257SE27006

Reexamination Certificate

active

07663197

ABSTRACT:
A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≧Ms<√{square root over ( )}{Jw/(6πAt)}. Jw is a write current density,tis a thickness of the free layer, A is a constant.

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