Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2005-09-30
2010-10-12
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257S100000, C257SE33072, C257SE33075
Reexamination Certificate
active
07812360
ABSTRACT:
A light emitting apparatus11comprises: an aluminum nitride co-fired substrate13; at least one light emitting device15mounted on a front surface of the co-fired substrate13through a flip-tip method; and a reflector16having an inclined surface14for reflecting a light emitted from the light emitting device15to a front side direction, the reflector16is bonded to a surface of the aluminum nitride co-fired substrate13so as to surround a circumference of the light emitting device15. This configuration can simplify the process of manufacturing the apparatus and can provide light emitting apparatus that are excellent in heat radiation performance, allow a larger current to pass therethrough, and can have a significantly increased luminance with a high luminous efficiency.
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Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Toshiba Materials Co., Ltd.
Tran Minh-Loan T
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