Nitride-based semiconductor substrate, method of making the...

Details Nitride-based semiconductor substrate, method of making the... Nitride-based semiconductor substrate, method of making the...

2006-10-04

2010-06-01

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S012000, C257S094000, C257SE33023, C257SE33025, C117S084000, C117S103000, C117S104000

Reexamination Certificate

active

07728323

ABSTRACT:
A nitride-based semiconductor substrate has a substrate formed of a nitride-based semiconductor crystal having a mixed crystal composition with three elements or more. The substrate has a diameter of not less than 25 mm, and a thermal resistivity in a range of 0.02 Kcm2/W to 0.5 Kcm2/W in its thickness direction.

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