Method for measuring interface traps in thin gate oxide MOSFETS

Details Method for measuring interface traps in thin gate oxide MOSFETS Method for measuring interface traps in thin gate oxide MOSFETS

2010-07-06

2010-12-28

Patel, Paresh (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C702S117000, C438S017000

Reexamination Certificate

active

07859289

ABSTRACT:
A method for measuring interface traps in a MOSFET, includes measuring charge pumping current of a pulse wave form for various frequencies over a predetermined frequency range, creating plotted points of the measured charge pumping current versus the predetermined frequency range, determining the total number of interface traps participating in the charge pumping current by calculating the slope of a best fit line through the plotted points.

REFERENCES:
patent: 5521525 (1996-05-01), Nicollian et al.

Affiliated with

Also associated with

Rating

Method for measuring interface traps in thin gate oxide MOSFETS does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for measuring interface traps in thin gate oxide MOSFETS, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for measuring interface traps in thin gate oxide MOSFETS will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4213061