Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2007-08-31
2010-02-23
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE21122
Reexamination Certificate
active
07666758
ABSTRACT:
A process for fabricating a silicon on insulator (SOI) substrate by forming a weakened zone within a semiconductor donor substrate to define a thick layer having a thickness of greater 150 nm and form a boundary between the thick layer and a remainder of the donor substrate, bonding the donor substrate to a semiconductor receiver substrate, with one of the substrates including an oxide layer that is present between the donor and receiver substrates after bonding; detaching a remainder of the donor substrate along the weakened zone to obtain a semifinished SOI substrate comprising the receiver substrate, the oxide layer and the thick layer; and finishing the semifinished SOI substrate by thinning the thick layer to obtain a silicon layer having a thickness is less than that of the thick layer but greater than 150 nm; long annealing the semifinished SOI substrate in a gaseous atmosphere comprising hydrogen and/or argon; and thinning the thin layer to obtain an ultrathin layer with a thickness of 150 nm or less and the finished substrate.
REFERENCES:
patent: 5966620 (1999-10-01), Sakaguchi et al.
patent: 6372609 (2002-04-01), Aga et al.
patent: 7315064 (2008-01-01), Mitani et al.
patent: 7326628 (2008-02-01), Ben Mohamed et al.
patent: 7354844 (2008-04-01), Endo et al.
patent: 2003/0181001 (2003-09-01), Aga et al.
patent: 2004/0161948 (2004-08-01), Maleville et al.
patent: 2005/0026426 (2005-02-01), Maleville et al.
patent: 2006/0160328 (2006-07-01), Daval
patent: 2006/0177991 (2006-08-01), Murakami et al.
patent: 2006/0177993 (2006-08-01), Endo et al.
patent: 2006/0189102 (2006-08-01), Barge et al.
patent: 2008/0200010 (2008-08-01), Endo et al.
patent: 0 4843 344 (2002-01-01), None
patent: 1 662 555 (2006-05-01), None
patent: 1 688 990 (2006-08-01), None
patent: 1 688 991 (2006-08-01), None
patent: 2 797 713 (2001-02-01), None
patent: 2 827 423 (2003-02-01), None
patent: 2 858 462 (2005-02-01), None
patent: 2 861 497 (2005-04-01), None
Coleman W. David
S.O.I.Tec Silicon on Insulator Technologies
Shook Daniel
Winston & Strawn LLP
LandOfFree
Process for fabricating a substrate of the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for fabricating a substrate of the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating a substrate of the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4212776