Method for fabricating a thin film transistor using a silicide a

Details Method for fabricating a thin film transistor using a silicide a Method for fabricating a thin film transistor using a silicide a

1989-09-18

1991-04-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437200, 437228, 148DIG105, 148DIG106, H01L 2144

Patent

active

050082183

ABSTRACT:
A method for fabricating an active matrix substrate is disclosed which includes the following steps: forming an island region of a first semiconductor film on a prescribed insulating substrate; forming a first insulating film and a second semiconductor film on said first insulating film; forming a second insulating film on said second semiconductor film and thereafter forming a prescribed pattern of the second insulating film; depositing prescribed metal on the pattern and thereafter forming a compound of the second semiconductor film and the metal; removing unreacted portion of the metal; and etching said second semiconductor film and said first insulating film using said compound as a mask.

REFERENCES:
patent: 4285761 (1981-08-01), Fatula, Jr. et al.
patent: 4362597 (1982-12-01), Fraser et al.
patent: 4444617 (1984-04-01), Whitcomb
patent: 4470189 (1984-09-01), Roberts et al.
patent: 4726879 (1988-02-01), Bondur et al.
patent: 4753709 (1988-06-01), Welch et al.

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