Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-05-09
2010-10-26
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23145, C257SE23024, C257SE23161, C257S668000, C257S774000, C257S680000, C257S766000, C257S763000, C257S700000, C257S701000, C257S758000, C257S751000, C257S752000
Reexamination Certificate
active
07821135
ABSTRACT:
A semiconductor device of improved stress-migration resistance and reliability includes an insulating film having formed therein a lower interconnection consisting of a barrier metal film and a copper-silver alloy film, on which is then formed an interlayer insulating film. In the interlayer insulating film is formed an upper interconnection consisting of a barrier metal film and a copper-silver alloy film. The lower and the upper interconnections are made of a copper-silver alloy which contains silver in an amount more than a solid solution limit of silver to copper.
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Chinese Official Action dated Jun. 13, 2008.
Hayes & Soloway P.C.
NEC Electronics Corporation
Williams Alexander O
LandOfFree
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