Methods of forming single-crystal metal-silicide nanowires...

Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound

Reexamination Certificate

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C423S345000

Reexamination Certificate

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07829050

ABSTRACT:
Various embodiments of the present invention are directed to methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures. In one embodiment of the present invention, a method of fabricating nanowires is disclosed. In the method, a number of nanowire-precursor members are formed. Each of the nanowire-precursor members includes a substantially single-crystal silicon region and a polycrystalline-metallic region. The substantially single-crystal silicon region and the polycrystalline-metallic region of each of the nanowire-precursor members is reacted to form corresponding substantially single-crystal metal-silicide nanowires. In another embodiment of the present invention, a nanowire structure is disclosed. The nanowire structure includes a substrate having an electrically insulating layer. A number of substantially single-crystal metal-silicide nanowires are positioned on the electrically insulating layer.

REFERENCES:
patent: 6656573 (2003-12-01), Chen et al.
patent: 6699779 (2004-03-01), Chen et al.
patent: 6773616 (2004-08-01), Chen et al.
patent: 6998333 (2006-02-01), Chen et al.
patent: 7087946 (2006-08-01), Chen et al.

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