Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-08-01
2010-11-30
Ahmed, Shamim (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S689000, C438S694000, C438S706000, C216S058000, C216S067000, C216S074000, C216S079000
Reexamination Certificate
active
07842618
ABSTRACT:
A method for forming a memory device is provided. A nitride layer is formed over a substrate. The nitride layer and the substrate are etched to form a trench. The nitride layer is trimmed on opposite sides of the trench to widen the trench within the nitride layer. The trench is filled with an oxide material. The nitride layer is stripped from the memory device, forming a mesa above the trench.
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Chang Kuo-Tung
Hui Angela T.
Kim Unsoon
Kinoshita Hiroyuki
Wu Yider
Advanced Micro Devices , Inc.
Ahmed Shamim
Harrity & Harrity LLP
Spansion LLC
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