Surface reconstruction method for silicon carbide substrate

Details Surface reconstruction method for silicon carbide substrate Surface reconstruction method for silicon carbide substrate

2006-03-02

2010-12-07

Parker, Frederick J (Department: 1712)

Coating processes

Restoring or repairing

C427S255180, C427S397700, C117S095000, C117S097000

Reexamination Certificate

active

07846491

ABSTRACT:
A surface reconstruction method for a silicon carbide substrate includes a silicon film forming step of forming a silicon film on a surface of the silicon carbide substrate and a heat treatment step of heat-treating the silicon carbide substrate and the silicon film without providing a polycrystalline silicon carbide substrate on a surface of the silicon film. Here, after the heat treatment step, a silicon film removal step of removing the silicon film may be included. Further, a silicon oxide film forming step of oxidizing the silicon film after the heat treatment step to generate a silicon oxide film, and a silicon oxide film removal step of removing the silicon oxide film may be included.

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Machine translation of Yano.

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