Enhanced mobility CMOS transistors with a V-shaped channel...

Details Enhanced mobility CMOS transistors with a V-shaped channel... Enhanced mobility CMOS transistors with a V-shaped channel...

2007-01-19

2010-06-01

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

With current flow along specified crystal axis

C257S141000, C257SE29004

Reexamination Certificate

active

07728364

ABSTRACT:
The present invention provides structures and methods for a transistor formed on a V-shaped groove. The V-shaped groove contains two crystallographic facets joined by a ridge. The facets have different crystallographic orientations than what a semiconductor substrate normally provides such as the substrate orientation or orientations orthogonal to the substrate orientation. Unlike the prior art, the V-shaped groove is formed self-aligned to the shallow trench isolation, eliminating the need to precisely align the V-shaped grooves with lithographic means. The electrical properties of the new facets, specifically, the enhanced carrier mobility, are utilized to enhance the performance of transistors. In a transistor with a channel on the facets that are joined to form a V-shaped profile, the current flows in the direction of the ridge joining the facets avoiding any inflection in the direction of the current.

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O. Weber et al., “A Novel Locally Engineered (111) V-Channel pMOSFET Architecture with Improved Drivability Characteristics for Low-Standby Power (LSTP) CMOS Applications”, 2005 Symposium on VLSI Technology Digest of Technical Papers, pp. 156-157.
Leland Chang et al., “CMOS Circuit Performance Enhancement by Surface Orientation Optimization”, IEEE Transactions on Electron Devices, vol. 51, No. 10, Oct. 2004, pp. 1621-1627.

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