Stacked multilayer structure and manufacturing method thereof

Details Stacked multilayer structure and manufacturing method thereof Stacked multilayer structure and manufacturing method thereof

2008-06-27

2010-12-21

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S314000, C257S211000, C257S773000, C257S774000, C257S775000, C257SE21662, C257SE27102

Reexamination Certificate

active

07855457

ABSTRACT:
A stacked multilayer structure according to an embodiment of the present invention comprises: a stacked layer part including a plurality of conducting layers and a plurality of insulating layers, said plurality of insulating layers being stacked alternately with each layer of said plurality of conducting layers, one of said plurality of insulating layers being a topmost layer among said plurality of conducting layers and said plurality of insulating layers; and a plurality of contacts, each contact of said plurality of contacts being formed from said topmost layer and each contact of said plurality of contacts being in contact with a respective conducting layer of said plurality of conducting layers, a side surface of each of said plurality of contacts being insulated from said plurality of conducting layers via an insulating film.

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