Image sensor and image sensing apparatus comprising...

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

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C257S292000, C438S059000

Reexamination Certificate

active

07741590

ABSTRACT:
An image sensor comprises a photoelectric conversion unit; a transfer transistor which has a gate electrode; a multilayer wiring structure which defines an aperture region above the photoelectric conversion unit; and a waveguide which guides light entering the aperture region to the light receiving surface, wherein the multilayer wiring structure includes a first wiring layer which is an uppermost wiring layer and defines two contour sides of the aperture region in a first direction, and a second wiring layer which is arranged between the gate electrode and the first wiring layer in a direction perpendicular to the light receiving surface, and defines two contour sides of the aperture region in a second direction, and wherein the gate electrode is arranged to overlap part of the light receiving surface and have a longitudinal direction along the first direction.

REFERENCES:
patent: 7442973 (2008-10-01), Komoguchi et al.
patent: 2008/0135732 (2008-06-01), Toumiya et al.
patent: 2004-221532 (2004-08-01), None

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