Inverted LED structure with improved light extraction

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

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Details

C438S025000, C438S027000, C438S029000, C438S032000, C438S042000, C257SE33068, C257SE33074

Reexamination Certificate

active

07741134

ABSTRACT:
A light source and method for fabricating the same are disclosed. The light source includes a substrate and a light emitting structure. The substrate has a first surface and a second surface, the second surface including a curved, convex surface with respect to the first surface of the substrate. The light emitting structure includes a first layer of a material of a first conductivity type overlying the first surface, an active layer overlying the first layer, the active layer generating light when holes and electrons recombine therein, and a second layer includes a material of a second conductivity type overlying the active layer and a second surface opposite to the first surface. A mirror layer overlies the light emitting structure.

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PCT Search Report and Written Opinion, Mar. 16, 2010 in PCT/US2009/054537.

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