Static information storage and retrieval – Interconnection arrangements
Reexamination Certificate
2008-07-25
2010-10-26
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Interconnection arrangements
C365S051000
Reexamination Certificate
active
07821805
ABSTRACT:
To secure a sufficient read-out voltage even when lines are arranged at a fine pitch, a semiconductor memory device including: a memory array in which a plurality of memory cells are arranged in rows and columns; and a plurality of bit lines associated with the respective columns of the memory cells is provided. The bit lines include main bit lines and sub bit lines to have a hierarchical structure, the main bit lines are divided among a plurality of interconnection layers, and a distance between the main bit lines in one of the interconnection layers is larger than a distance between the sub bit lines.
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McDermott Will & Emery LLP
Panasonic Corporation
Pham Ly D
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