Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-08-06
2010-12-28
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257SE33067, C257SE33059
Reexamination Certificate
active
07859002
ABSTRACT:
A light-emitting device (1) having a base (10) and a light-emitting element (11) placed on the base (10) includes a first sealing material layer (12) covering the light-emitting element (11) and a second sealing material layer (13) surrounding a side surface of the first sealing material layer (12), wherein the refractive index of the first sealing material layer (12) and the refractive index of the second sealing material layer (13) are different from each other. The light-emitting device (1) is capable of controlling a radiation pattern from the light-emitting element (11) by controlling the refractive index of the first sealing material layer (12) and the refractive index of the second sealing material layer (13). This can facilitate the miniaturization and reduction in thickness of the light-emitting device (1), and prevent the decrease in a light output efficiency of the light-emitting device (1).
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Ikeda Tadaaki
Nagai Hideo
Suzuki Masa-aki
Dickey Thomas L
Erdem Fazli
Hamre Schumann Mueller & Larson P.C.
Panasonic Corporation
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