Magnetic tunnel junctions using amorphous materials as...

Coating processes – Magnetic base or coating – Magnetic coating

Reexamination Certificate

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C427S132000, C428S811100, C428S811200, C428S812000, C428S816000

Reexamination Certificate

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07666467

ABSTRACT:
Magnetic tunnel junctions are constructed from a MgO or Mg—ZnO tunnel barrier and amorphous magnetic layers in proximity with, and on respective sides of, the tunnel barrier. The amorphous magnetic layer preferably includes Co and at least one additional element selected to make the layer amorphous, such as boron. Magnetic tunnel junctions formed from the amorphous magnetic layers and the tunnel barrier have tunneling magnetoresistance values of up to 200% or more.

REFERENCES:
patent: 6674617 (2004-01-01), Gill
patent: 6767655 (2004-07-01), Hiramoto et al.
patent: 7252852 (2007-08-01), Parkin
patent: 7270896 (2007-09-01), Parkin
patent: 7274080 (2007-09-01), Parkin
patent: 7276384 (2007-10-01), Parkin et al.
patent: 7300711 (2007-11-01), Parkin
patent: 7345855 (2008-03-01), Parkin
patent: 7349187 (2008-03-01), Parkin
patent: 7351483 (2008-04-01), Parkin
patent: 7357995 (2008-04-01), Parkin
patent: 7443639 (2008-10-01), Parkin
patent: 2002/0055016 (2002-05-01), Hiramoto et al.
patent: 2002/0114112 (2002-08-01), Nakashio et al.
patent: 2003/0008416 (2003-01-01), Shimura et al.
patent: 2003/0169542 (2003-09-01), Gill
patent: 2007/0259213 (2007-11-01), Hashimoto et al.
patent: 2008/0138660 (2008-06-01), Parkin
patent: 2008/0145952 (2008-06-01), Parkin
patent: 2008/0182015 (2008-07-01), Parkin
patent: 2008/0182342 (2008-07-01), Parkin
patent: 2008/0291584 (2008-11-01), Parkin
Butler et al.; “Spin-dependant tunneling conductance of /Fe/Mg/Fe sandwiches”; (Phys. Rev. B, 63, Jan. 2001, pp. 054416-1-054416-12).
Nishimura et al.; Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory; (J. App. Phys., v91(8), Apr. 2002, pp. 5246-5249).
Yuasa et al., “Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions”, Nature Materials, Oct. 31, 2004, pp. 868-871, vol. 3, Nature Publishing Group.
Parkin et al., “Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers”, Nature Materials, Oct. 31, 2004, pp. 862-867, vol. 3, Nature Publishing Group.
U.S. Appl. No. 12/554,420, filed Sep. 4, 2009, Stuart Parkin.

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