Visible-wavelength semiconductor lasers and arrays

Details Visible-wavelength semiconductor lasers and arrays Visible-wavelength semiconductor lasers and arrays

1995-05-19

1996-09-17

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 50, 372 96, H01S 319

Patent

active

055576273

ABSTRACT:
A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

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R. P. Schneider, Jr., J. A. Lott, K. L. Lear, K. D. Choquette, M. H. Crawford, S. P. Kilcoyne, and J. J. Figiel, "Metalorganic Vapor Phase Epitaxial Growth of Red and Infrared Vertical-Cavity Surface-Emitting Laser Diodes," Journal of Crystal Growth, vol. 145, pp. 838-845, 1994. (No month).
J. A. Lott, R. P. Schneider, Jr., K. J. Malloy, S. P. Kilcoyne, and K. D. Choquette, "Partial Top Dielectric Stack Distributed Bragg Reflectors for Red Vertical Cavity Surface Emitting Laser Arrays," IEEE Photonics Technology Letters, vol. 16, pp. 1397-1399, Dec. 1994.
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