Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

1987-06-12

1989-01-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437173, 437194, 437195, 437249, 148DIG93, 427 431, 427 531, 21912173, H01L 2104, H01L 2100

Patent

active

048001791

ABSTRACT:
A method for fabricating a semiconductor device comprises forming a contact hole in an insulating film formed on a first wiring composed of an Al film, covering the insulating film with an Al film for a second wiring, applying laser beam pulses to the Al film for a second wiring from above, and patterning the Al film to form a second wiring.

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David B. Tuckerman et al., "Laser Planarization", Solid State Technology, pp. 129-134, vol. 29, No. 4, Apr. 1986, Port Washington, New York.
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T. McGrath, "Application of Excimer Lasers in Microelectronics", Solid State Technology, pp. 165-169, vol. 26, No. 12, Dec. 1983, Washington, New York.

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