Phosphorous planar dopant source for low temperature application

Details Phosphorous planar dopant source for low temperature application Phosphorous planar dopant source for low temperature application

1987-05-29

1989-01-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437168, 148 33, 501 4, 252951, H01L 21225

Patent

active

048001759

ABSTRACT:
A boron-containing heterocyclic compound prepared by reacting a primary amine of ammonia with an alkylene oxide or epoxide and then reacting concurrently or subsequently this reaction intermediate with a boric acid. This boron-containing heterocyclic compound may further be reacted with a metal metalloid or other metal compound and even further contain sulfur, such as a sulfide group.

REFERENCES:
patent: 3841927 (1974-10-01), Florence et al.
patent: 3920882 (1975-11-01), Venkatu
patent: 3998668 (1976-12-01), Florence et al.
patent: 4033790 (1977-07-01), Gunjigake et al.
patent: 4141738 (1979-02-01), Rapp
patent: 4175988 (1979-11-01), Rapp

Affiliated with

Also associated with

Rating

Phosphorous planar dopant source for low temperature application does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phosphorous planar dopant source for low temperature application, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phosphorous planar dopant source for low temperature application will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-419715