Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2007-11-20
2010-11-09
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S098000, C257SE33065, C257SE33068
Reexamination Certificate
active
07829911
ABSTRACT:
At an upper part of au AIGaInP based compound semiconductor layer including an active layer14sandwiched by a lower cladding layer13and an upper cladding layer15, a circular electrode19for wire bonding and cross-shaped branch electrodes18for current spreading connected to the circular electrode19arc formed. A contact electrode17for current injection is connected to the branch electrodes18for current spreading. An interface contact electrode12for current injection is provided under the AIGaInP based compound semiconductor layer. A light reflection mirror layer10is provided under the interface contact electrode12for current injection. The interface contact electrode12for current injection is provided right under an outer periphery of the electrode19for wire bonding or under a region in vicinity of the outer periphery of the electrode19for wire bonding.
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Chen Yu
Hitachi Cable Ltd.
Jackson, Jr. Jerome
Scully , Scott, Murphy & Presser, P.C.
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