Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-12-31
2010-10-12
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S189040, C365S189070, C365S210110
Reexamination Certificate
active
07813181
ABSTRACT:
A page of non-volatile multi-level storage elements on a word line WLn is sensed in parallel while compensating for perturbations from a neighboring page on an adjacent word line WLn+1. First, the programmed thresholds of storage elements on WLn+1 are sensed in the time domain and encoded as time markers. This is accomplished by a scanning sense voltage increasing with time. The time marker of a storage element indicates the time the storage element starts to conduct or equivalently when the scanning sense voltage has reached the threshold of the storage element. Secondly, the page on WLn is sensed while the same scanning voltage with an offset level is applied to WLn+1 as compensation. In particular, a storage element on WLn will be sensed at a time indicated by the time marker of an adjacent storage element on WLn+1, the time when the offset scanning voltage develops an appropriate compensating bias voltage on WLn+1.
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Davis , Wright, Tremaine, LLP
Ho Hoai V
SanDisk Corporation
Tran Anthan T
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