Method for manufacturing a junction field effect transisor

Details Method for manufacturing a junction field effect transisor Method for manufacturing a junction field effect transisor

1991-04-11

1992-05-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437133, H01L 21265, H01L 2120

Patent

active

051167727

ABSTRACT:
The present invention provides a method for manufacturing a field effect transistor which overcomes problems occurring in the manufacture of InP material junction field effect transistors. Because the electron saturation velocity is higher than that of silicon or GaAs it is desirable to have a gate length shorter than the mask length as well as to have the source, drain, and gate metals evaporated by the self-aligned method. The present invention provides a method of achieving gate lengths of 1 .mu.m or shorter without requiring an expensive electron beam apparatus or X-ray lighography apparatus.

REFERENCES:
patent: 4075652 (1978-02-01), Umebachi et al.
patent: 4700462 (1987-10-01), Beaubien et al.
patent: 4774206 (1988-09-01), Willer

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