Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2007-06-27
2010-12-14
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S687000, C257S690000, C257S723000, C257S752000
Reexamination Certificate
active
07851908
ABSTRACT:
A semiconductor device is disclosed. One embodiment provides a module including a first carrier having a first mounting surface and a second mounting surface, a first semiconductor chip mounted onto the first mounting surface of the first carrier and having a first surface facing away from the first carrier, a first connection element connected to the first surface of the first semiconductor chip, a second semiconductor chip having a first surface facing away from the first carrier, a second connection element connected to the first surface of the second semiconductor chip, and a mold material covering the first connection element and the second connection element only partially.
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Sawle et al., “Novel Power MOSFET Packaging Technology Doubles Power Density in Synchronous Buck Converters for Next Generation Microprocessors,” International Rectifier, APEC 2002.
Hoeglauer Josef
Huber Erwin
Otremba Ralf
Schloegel Xaver
Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Wojciechowicz Edward
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