Method for forming capacitor of semiconductor device

Details Method for forming capacitor of semiconductor device Method for forming capacitor of semiconductor device

2007-12-28

2010-12-07

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S396000, C438S398000, C438S399000, C438S243000, C438S244000, C438S254000, C438S255000, C438S256000, C257S301000, C257S306000, C257SE21648, C257SE21660, C257SE21651

Reexamination Certificate

active

07846809

ABSTRACT:
A method for forming a capacitor of a semiconductor device includes the steps of forming first and second sacrificial insulation layers over a semiconductor substrate divided into first and second regions. The second and first sacrificial insulation layers in the first region are etched to define in the first region of the semiconductor substrate. Storage nodes on surfaces of the holes are formed. A partial thickness of the second sacrificial insulation layer is etched to partially expose upper portions of the storage nodes. A mask pattern is formed to cover the first region while exposing the second sacrificial insulation layer remaining in the second region. The exposed second sacrificial insulation layer in the second region is removed to expose the first sacrificial insulation layer in the second region. The exposed first sacrificial insulation layer in the second region and the first sacrificial insulation layer in the first region is removed. The mask pattern is removed. The second sacrificial insulation layer remaining in the first region is removed.

REFERENCES:
patent: 5552334 (1996-09-01), Tseng
patent: 6077742 (2000-06-01), Chen et al.
patent: 6200898 (2001-03-01), Tu
patent: 6268244 (2001-07-01), Park
patent: 6342419 (2002-01-01), Tu
patent: 6784068 (2004-08-01), Lee et al.
patent: 7498267 (2009-03-01), Kim et al.
patent: 2002/0024085 (2002-02-01), Nakamura et al.
patent: 2005/0116318 (2005-06-01), Park
patent: 2006/0088991 (2006-04-01), Kim
patent: 2006/0189064 (2006-08-01), Shim et al.
patent: 2004-0002010 (2004-01-01), None
patent: 2004-0060129 (2004-07-01), None
patent: 2005-0018074 (2005-02-01), None
patent: 2005-0073211 (2005-07-01), None
patent: 2006-0029731 (2006-04-01), None
patent: 2006-0068199 (2006-06-01), None

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