Method of manufacturing photoelectric conversion device

Details Method of manufacturing photoelectric conversion device Method of manufacturing photoelectric conversion device

2008-11-26

2010-12-28

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S455000, C438S486000, C257SE21568

Reexamination Certificate

active

07858431

ABSTRACT:
A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.

REFERENCES:
patent: 4180618 (1979-12-01), Alpha et al.
patent: 4496788 (1985-01-01), Hamakawa et al.
patent: 4633034 (1986-12-01), Nath et al.
patent: 4727047 (1988-02-01), Bozler et al.
patent: 4816420 (1989-03-01), Bozler et al.
patent: 5371037 (1994-12-01), Yonehara
patent: 5665607 (1997-09-01), Kawama et al.
patent: 5736431 (1998-04-01), Shinohara et al.
patent: 5750000 (1998-05-01), Yonehara et al.
patent: 5811348 (1998-09-01), Matsushita et al.
patent: 5840616 (1998-11-01), Sakaguchi et al.
patent: 5854123 (1998-12-01), Sato et al.
patent: 6190937 (2001-02-01), Nakagawa et al.
patent: 6331208 (2001-12-01), Nishida et al.
patent: 6372609 (2002-04-01), Aga et al.
patent: 6380046 (2002-04-01), Yamazaki
patent: 6387829 (2002-05-01), Usenko et al.
patent: 6534380 (2003-03-01), Yamauchi et al.
patent: 6566277 (2003-05-01), Nakagawa et al.
patent: 6605518 (2003-08-01), Ohmi et al.
patent: 6656271 (2003-12-01), Yonehara et al.
patent: 6692981 (2004-02-01), Takato et al.
patent: 6818529 (2004-11-01), Bachrach et al.
patent: 2004/0056332 (2004-03-01), Bachrach et al.
patent: 2008/0099065 (2008-05-01), Ito et al.
patent: 2008/0160661 (2008-07-01), Henly
patent: 2008/0245406 (2008-10-01), Yamazaki et al.
patent: 2009/0142908 (2009-06-01), Isaka et al.
patent: 06-044638 (1994-06-01), None
patent: 10-093122 (1998-04-01), None
patent: 10-093122 (1998-04-01), None
patent: 10-335683 (1998-12-01), None
patent: 10-335683 (1998-12-01), None
patent: 11-097379 (1999-04-01), None
patent: 11-163363 (1999-06-01), None
patent: 2000-150940 (2000-05-01), None
patent: 2002-348198 (2002-12-01), None
patent: 2005-268682 (2005-09-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing photoelectric conversion device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing photoelectric conversion device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing photoelectric conversion device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4191864