Method for producing deep trench structures

Details Method for producing deep trench structures Method for producing deep trench structures

2007-06-18

2010-12-14

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21546, C438S424000, C438S430000

Reexamination Certificate

active

07851326

ABSTRACT:
A method for producing deep trench structures in an STI structure of a semiconductor substrate is provided, with the following successive process steps: subsequent to a full-area filling of STI recesses introduced into a semiconductor substrate with a first filler material, a first surface of a semiconductor structure is subjected to a CMP process to level the applied filler material and produce the STI structure; the leveled STI structure thus produced is structured; using the structured, leveled STI structure as a hard mask, at least one deep trench is etched in the area of this STI structure to create the deep trench structures.

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patent: 2003/0030089 (2003-02-01), Sumino et al.
patent: 1517365 (2004-09-01), None

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