Semiconductor device including a barrier metal film

Details Semiconductor device including a barrier metal film Semiconductor device including a barrier metal film

2005-05-20

2010-02-09

Williams, Alexander O (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23145, C257S774000, C257SE23010, C257SE21171, C257SE21495, C438S643000, C438S629000

Reexamination Certificate

active

07659626

ABSTRACT:
A semiconductor device includes an insulation film6formed on a silicon substrate1, a buried metal interconnect8formed in the insulation film6, and a barrier metal film7formed between the insulation film6and the metal interconnect8. The barrier metal film7is a metal compound film. The metal compound film is characterized by including at least one of elements forming the insulation film.

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