Semiconductor device having multi-layered wiring

Details Semiconductor device having multi-layered wiring Semiconductor device having multi-layered wiring

2008-08-26

2010-11-23

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S760000, C257S776000, C257SE21576, C257SE23134, C257SE23167, C257S635000, C257S637000, C257S639000, C257S640000, C257S649000

Reissue Patent

active

RE041948

ABSTRACT:
A semiconductor device is provided with a first insulating film, a first wiring layer formed in the first insulating film, a second insulating film formed above the first wiring layer and the first insulating film, the second insulating film including a low dielectric constant film, a second wiring layer formed in the second insulating film and coupled to the first wiring layer through a first connection section, and a third insulating film formed above the second wiring layer and the second insulating film and serving as one of an interlayer insulating film and a passivation film, and at least one of the first and third insulating films being one of a film formed mainly of SiON, a film formed mainly of SiN, and a laminated film being the films formed mainly of SiON or SiN respectively.

REFERENCES:
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 5786625 (1998-07-01), Yamaha
patent: 5872402 (1999-02-01), Hasegawa
patent: 6316833 (2001-11-01), Oda
patent: 6344693 (2002-02-01), Kawahara et al.
patent: 6436850 (2002-08-01), Morales
patent: 2000-332018 (2000-11-01), None

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