Organic thin film transistor comprising gate electrode of...

Details Organic thin film transistor comprising gate electrode of... Organic thin film transistor comprising gate electrode of...

2007-12-27

2010-10-19

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S288000, C257S368000, C977S742000, C977S832000, C977S938000

Reexamination Certificate

active

07816675

ABSTRACT:
Provided are an organic thin film transistor (OTFT) and a fabrication method thereof, an organic semiconductor device having the OTFT, and a flexible display device having the OTFT. The OTFT includes a substrate, a gate electrode, an insulating layer, an active layer, and a source/drain electrode. The gate electrode may be made of a nanocrystalline carbon layer.

REFERENCES:
patent: 7622367 (2009-11-01), Nuzzo et al.
patent: 2006/0145146 (2006-07-01), Suh et al.
patent: 2007/0111031 (2007-05-01), Isberg et al.

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