Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2006-12-27
2010-10-12
Huff, Mark F (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C716S030000
Reexamination Certificate
active
07811722
ABSTRACT:
A photomask comprises a transparent substrate, a peripheral pattern formed on the transparent substrate along a contour of a target pattern to be transferred onto a wafer, and an assist pattern disposed inside the peripheral pattern. The photomask has the assist pattern formed inside the target pattern, thereby preventing the assist pattern from being undesirably on the target pattern. In addition, the method can fabricate the assist pattern in a complicated structure which cannot be realized by the conventional technique, so that it can be applied to any kinds of patterns.
REFERENCES:
patent: 6841315 (2005-01-01), Imura
patent: 2001/0049064 (2001-12-01), Lee et al.
patent: 2003/0082463 (2003-05-01), Laidig et al.
patent: 2004/0115539 (2004-06-01), Broeke et al.
patent: 2006/0216616 (2006-09-01), Shin et al.
patent: 2006/0257753 (2006-11-01), Kim et al.
patent: 2007/0105023 (2007-05-01), Zhou et al.
patent: 10-2002-0053753 (2002-07-01), None
patent: 10-2005-0069505 (2005-07-01), None
patent: 10-2005-0069506 (2005-07-01), None
Fraser Stewart A
Huff Mark F
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
LandOfFree
Photomask and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photomask and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photomask and method for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4187990